elek tr onische b a ue lem ente mmbt a55 / mmbt a56 p n p silic on driv er t r a n sist o r sot-23 ? maximum ratings rating symbol value unit MMBTA55 -60 collector - emitter voltage mmbta56 v ceo -80 v MMBTA55 -60 collector - base voltage mmbta56 v cbo -80 v emitter - base voltage v ebo -4.0 v collector current - continuous i c -500 ma ? thermal characteristics characteristic symbol max. unit total device dissipation fr-5 board (1) t a = 25 : 225 mw derate above 25 : p d 1.8 mw / : thermal resistance, junction to ambient r ja 556 / w : total device dissipation alumina substrate (2) , t a = 25 : 300 mw derate above 25 : p d 2.4 mw / : thermal resistance, junction to ambient r ja 417 / w : operating and storage junction temperature range t j , t stg -55 ~ +150 : 1. fr-5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.secosgmbh.com/ any changing of specification will not be informed individual dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3 collector 3 1 base 2 emitter marking code: MMBTA55:2h , mmbta56:2gm 01 -jun-2002 rev. a page 1 of 4 rohs compliant product a suffix of "-c" specifies halogen & lead-free
? electrical characteristics (t a = 25 : unless otherwise noted) characteristic symbol min. max. unit off characteristics collector - emitter breakdown voltage (3) MMBTA55 -60 - (i c = -1.0 ma, i b = 0) mmbta56 v (br)ceo -80 - v emitter - base breakdown voltage (i e = -100 a, i c = 0) v (br)ebo -4.0 - v collector cutoff current (v ce = -60 v, i b = 0 v) i ces - -0.1 na collector cutoff current (v cb = -60 v, i e = 0) MMBTA55 - -0.1 (v cb = -80 v, i e = 0) mmbta56 i cbo - -0.1 a on characteristics dc current gain (i c = -10 ma, v ce = -1.0 v) 100 - (i c = -100 ma, v ce = -1.0 v) h fe 100 - - collector - emitter saturation voltage (i c = -100 ma, i b = -10 ma) v ce(sat) - -0.25 v base - emitter saturation voltage (i c = -100 ma, v ce =-1.0v) v be(on) -- 1 . 2v small - signal characteristics current - gain - bandwidth product (4) (i c = -100 ma, v ce = -1.0 v, f = 100 mhz) f t 50 -mhz 3. pulse test: pulse width ? 300 s, duty cycle ? 2.0 %. 4. f t is defined as the frequency at which | h fe | extrapolates to unity. http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 1. switching time test circuits
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! *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities 01 -jun-2002 rev. a page 2 of 4 elektronische bauelemente MMBTA55 / mmbta56 pnp silicon driver transistor
? switching time equivalent test circuits http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 2. currentCgain bandwidth product figure 3. capacitance figure 4. switching time " #$%& ' ' ( ' " %) #&
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